http://rdf.ncbi.nlm.nih.gov/pubchem/patent/BR-112015021734-B1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_49308e8718b2bc5be941bc5b7a1d2443 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-32 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-005 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-16 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 |
| filingDate | 2014-03-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ae18c02a3ed1bd6441edd6f1707724d7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8a5bb774faed2682a63047638963094c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_116f0c498595349d12289fc8312e77cc |
| publicationDate | 2021-04-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | BR-112015021734-B1 |
| titleOfInvention | METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT-EMITTING ELEMENT |
| abstract | METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT-EMITTING ELEMENT. The present invention relates to a highly reliable semiconductor light-emitting element that has protrusions that are arranged in a regular and uniform size and a method for making said element. This method for making a semiconductor light-emitting element includes: a step to form a mask layer that has a plurality of openings arranged at regular intervals along a crystal geometry axis of a semiconductor structure layer on the surface of the layer. semiconductor structure; a step for carrying out a plasma treatment on the surface of the semiconductor structure layer that is exposed by the openings of the mask layer; a step to remove the mask layer; and a step for forming protrusions on the surface of the semiconductor structure layer through wet caustification of the surface of the semiconductor structure layer. |
| priorityDate | 2013-03-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID15913 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID449266279 |
Total number of triples: 21.