| abstract |
Semiconductor device and method for manufacturing the semiconductor device. The present invention relates to a semiconductor device (2) including first and second semiconductor elements (3, 5) and first and second conductive members (10, 29). electrode (3a) in the first semiconductor element is connected to a first stacking part (12) of the first conductive member by a first connecting layer (8a) .a second electrode (5b) in the second semiconductor element is connected to a second part of stacking (25) the second conductive member by a second bonding layer (8f), a first joint part (13) of the first conductive member is bonded and a second joint part (26) of the second conductive member by a bonding layer 8g) a first surface of the first joint part facing the second joint part, a side surface of the first continuous joint part from the first surface, a second surface The surface of the second joint part facing the first joint part, and a side surface of the second continuous joint part from the second surface are covered with nickel layers (19a, 19b). |