http://rdf.ncbi.nlm.nih.gov/pubchem/patent/BR-102012018610-B8
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c72d118f5664072de841f9c5c34b9d99 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1608 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66068 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0696 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7802 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-335 |
| filingDate | 2012-07-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_853bf6905b842b0f06e5e39d9b29bc00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_03d1c01d79d68406705a79012e619c76 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_785dcc61d279b90222cf018021142189 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_44413608843fc0730c2e25f28ce9d407 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a28a84272880804f32550544d341022c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_67904c6055ef2c5ebe4141a9e4cc40e0 |
| publicationDate | 2020-03-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | BR-102012018610-B8 |
| titleOfInvention | method for forming a vertical metal-oxide-semiconductor field effect transistor (mosfet) of silicon carbide (sic) |
| abstract | semiconductor method and device. in one embodiment, the invention comprises a mosfet comprising individual mosfet cells. each cell comprises a u-shaped well (228) (type p) and two parallel sources (260) (type n) formed inside the well. a plurality of source lines (262) (non-doped) connect the sources (260) at multiple locations. the regions between two lines (262) comprise a body (252) (type p). these characteristics are formed in an epitaxial layer type n (220), which is formed in a substrate type n (216). a contact (290) extends along, and contacts a plurality of source lines (262) and bodies (252). the gate oxide and a gate contact overlap a leg from a first well and a leg from an adjacent second well, which reverses conductivity in response to a gate voltage. a mosfet comprises a plurality of these cells that obtain a desired low channel resistance. cell regions are formed using self-alignment techniques in various states of the manufacturing process. |
| priorityDate | 2011-07-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID9863 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419549006 |
Total number of triples: 22.