| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_98f92c496e4f5c70f34681fb4bf526d2 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C1-00134
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C2201-0195
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C2203-0735
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C2203-0771 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C1-00301
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C1-00246
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H04R19-005
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B06B1-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B7-007
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B06B1-0292
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C1-00158
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N29-2406
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-84 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B06B1-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B81C1-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N29-24 |
| filingDate |
2018-06-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fca759faaaf0e67dc3443e9087bed922
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ded577b80a06de2133f3ca81364afef1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9016b59d3a299e608b7c390fa3eaa783
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a05e9a4a3314a9dbf92800121f70680a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b0237632cd3d9f76167fa98e88528e85 |
| publicationDate |
2018-06-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
AU-2018203942-A1 |
| titleOfInvention |
Complementary metal oxide semiconductor (CMOS) ultrasonic transducers and methods for forming the same |
| abstract |
An apparatus, comprising: a semiconductor wafer having a complementary metal oxide semiconductor (CMOS) integrated circuit and an electrode; a conductive membrane bonded to the semiconductor wafer to form a bonded structure such that a sealed cavity exists between an uppermost portion of the semiconductor wafer and a first side of the conductive membrane, thereby defining, at least in part, an ultrasonic transducer, with the sealed cavity disposed between the conductive membrane and the electrode; and the uppermost portion of the semiconductor wafer providing an electrical connection between the CMOS integrated circuit and the first side of the conductive membrane. 136 144 1310 128 '' 1'' -'' D18 138 142 . .. . .. . .. S. .'.6.4. . W ... l' . . . . . . . . . . . . . . \ . . . . . . . . . . . . . . 2602 118 2602 104.102 2602 18 242 FIG. 2610 12 |
| priorityDate |
2013-03-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |