http://rdf.ncbi.nlm.nih.gov/pubchem/patent/AU-2014295816-B2

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publicationDate 2018-09-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber AU-2014295816-B2
titleOfInvention High concentration doping in silicon
abstract A silicon device, has a plurality of crystalline silicon regions. One crystalline silicon region is a doped crystalline silicon region. Deactivating some or all of the dopant atoms in the doped crystalline silicon region is achieved by introducing hydrogen atoms into the doped 5 crystalline silicon region, whereby the hydrogen coulombicly bonds with some or all of the dopant atoms to deactivate the respective dopant atoms. Deactivated dopant atoms may be reactivated by heating and illuminating the doped crystalline silicon region to break at least some of the dopant - hydrogen bonds while maintaining conditions to create a high concentration of neutral hydrogen atoms whereby 10 some of the hydrogen atoms diffuse from the doped crystalline silicon region without re- binding to the dopant atoms.
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