| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_781c429e4e20536916ff74dcbe1b5417 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28079 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-3414
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01F17-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-285
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C22B59-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25C3-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C22C28-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-408
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C22B9-22 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C22C28-00 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C22B9-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C22B59-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-34 |
| filingDate |
2012-01-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2016-03-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ff0ccb01a0e01c3e4747d06c4e9fd40b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cd9aee1b3e2de6da9a1a9268a762ec23
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7c40c7531644134607078aee98aa56f6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c21d40e3ea72dbcadd4cccbb3bea424f |
| publicationDate |
2016-03-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
AU-2012208015-B2 |
| titleOfInvention |
Method for producing high-purity lanthanum, high-purity lanthanum, sputtering target formed from high-purity lanthanum, and metal gate film having high-purity lanthanum as main component |
| abstract |
The present invention addresses the problem of providing a technique capable of efficiently and stably providing a method for producing high-purity lanthanum, the method characterized in that: a crude lanthanum oxide raw material having a purity of 2-5 N, excluding gas components, is used as the starting material; the material is subjected to molten salt electrolysis at a bath temperature of 450-700°C to produce lanthanum crystals; the lanthanum crystals are subsequently desalted; and electron beam melting is then performed to remove volatile substances. The present invention also addresses the problem of providing a technique capable of efficiently and stably providing high-purity lanthanum, a sputtering target formed from high-purity material lanthanum; and a thin film for metal gates that has high-purity lanthanum as the main component. |
| priorityDate |
2011-01-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |