http://rdf.ncbi.nlm.nih.gov/pubchem/patent/AU-2009227670-B2
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2775e321e67b64cc99c02641ab6abbe5 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-549 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/D21H13-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/D21H11-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-471 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K77-111 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-10 |
| filingDate | 2009-03-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2014-07-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_44fe01ee5d1e1eca5a8e809f42e39f7a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_019457ad306eb958bd116853a902968c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4ad74927e48fbb7efcc03eec50d75f49 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4aadd12b013aa004fba710ac2994f724 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_75c24f9165969c88b67a120cde4970ec |
| publicationDate | 2014-07-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | AU-2009227670-B2 |
| titleOfInvention | Process for using and producing paper based on natural cellulose fibers, synthetic fibers or mixed fibers as physical support and storing medium for electrical charges in self-sustaining field-effect transistors with memory using active semiconductor oxides |
| abstract | Embodiments of the present disclosure provide for the use and creation of materials based on natural cellulose f ihres, synthetic fibres, or mixed fibres as physical Support and storing medium or storage inducer of electrical and ionic charges in self-sustaining discrete or complementary field-ef f ect transistors with non-volatile memory by using organic or inorganic active semi-conductors (1) for the manufacture of the Channel regions that is deposited on the fibres of the paper material (2)as well as metals or passive semiconductors for the manufacture of drain and source (5), allowing the interconneσtion of fiber, in addition to the gate electrode (3) existing on the other side of the paper, respectively,p or n type, in monolithic or hybrid f orms. |
| priorityDate | 2008-03-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 68.