http://rdf.ncbi.nlm.nih.gov/pubchem/patent/AU-2008344685-B2
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_781c429e4e20536916ff74dcbe1b5417 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-495 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C22C28-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C22B59-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-3414 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28079 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-495 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C22B9-228 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2855 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C22B59-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-49 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C22B9-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C22C28-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-283 |
| filingDate | 2008-10-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2012-09-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ff0ccb01a0e01c3e4747d06c4e9fd40b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6fd5b4d51d25d68e58c70dfda353f4b1 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9d7a4208822824bfd4bef74e0240e986 |
| publicationDate | 2012-09-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | AU-2008344685-B2 |
| titleOfInvention | Highly pure lanthanum, sputtering target comprising highly pure lanthanum, and metal gate film mainly composed of highly pure lanthanum |
| abstract | Disclosed is highly pure lanthanum which has a purity of 4 N or more as determined by excluding any rare earth element or any gaseous component therefrom, and which contains aluminum, iron and copper each in an amount of 100 wtppm or less. Also disclosed is highly pure lanthanum, which has a purity of 4 N or more as determined by excluding any rare earth element or any gaseous component therefrom, which contains aluminum, iron and copper each in an amount of 100 wtppm or less, which contains oxygen in an amount of 1500 wtppm or less, which contains an alkali metal element and an alkali earth metal element each in an amount of 1 wtppm or less, which contains a transition metal element and a high-melting-point metal element other than those mentioned above each in an amount of 10 wtppm or less, and which contains a radioactive element in an amount of 10 wtppb or less. Further disclosed is a technique for efficiently and stably providing highly pure lanthanum, a sputtering target comprising a highly pure lanthanum material and a metal gate thin film mainly composed of a highly pure lanthanum material. |
| priorityDate | 2007-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 54.